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MITSUBISHI LASER DIODES
ML9xx45 SERIES
Notice: Some parametric limits are subject to change.
1550,1520nm InGaAsP FP LASER DIODES
TYPE NAME
DESCRIPTION
ML920J45S , ML920K45S, ML920Y45S ML925B45F , ML925C45F
FEATURES
*1550 or 1520nm typical emission wavelength, FP-LDs *Low threshold current, low operating current *Wide temperature range operation (Tc=-40 to 85deg.C) *5.6mm TO-CA N package Flat window cap : ML920J45S, ML925B45F Ball lens cap : ML920K45S, ML925C45F, ML920Y45S
ML9XX45 series are InGaAsP laser diodes which provide a stable, single transverse mode oscillation with emission wavelength of 1550nm and standard continuous light output of 5mW. ML9XX45 are hermetically sealed devices having the photo diode for optical output monitoring. This is suitable for such applications as FTTH (Fiber to the Home)systems.
APPLICATION *~155Mbps FTTH system
ABSOLUTE MAXIMUM RATINGS
Symbol Po VRL VRD IFD Tc Tstg Parameter Light output power Laser reverse voltage PD reverse voltage PD forward current Operation temperature Storage temperature Conditions CW Ratings 6[4] 2 20 2 -40 to +85 -40 to +100 Unit mW V V mA deg.C deg.C
ELECTRICAL/OPTICAL CHARACTERISTICS(Tc=25oC)
Symbol Ith Iop Vop c tr,tf Im Id Ct Pf(Note2) Df(Note2) Parameter Threshold current Operation current Operating voltage Slope efficiency Center wavelength Spectral Width Beam divergence angle(parallel) Beam divergence angle (perpendicular) Rise and Fall time (10%-90%) Monitor Current (PD) Dark Current (PD) Capacitance (PD) Fiber Coupling characteristics at peak coupling<3> Test Conditions CW CW, Po=5mW[3mW] CW, Po=5mW[3mW] CW, Po=5mW[3mW] -01spec -02spec CW, Po=5mW, [3mW]RMS(-20dB) CW, Po=5mW[3mW] CW, Po=5mW[3mW] CW, Po=5mW[3mW] Ib=Ith,Po=5mW [3mW],10-90% CW, Po=5mW[3mW], VRD=1V, VRD=10V VRD=10V, f=1MHz CW, PL=3mW,SI10/125 ML920K45S CW, PL=3mW ML925C45F SI10/125 ML920Y45S Min. 3 10 --0.15[0.1] 1520 1495 --------0.1 ----0.2 5.0 6.0 Typ. 10 30 1.1 0.25[0.2] 1550 1520 1.5 25[11] 30[11] 0.3 0.5 --10 0.5 5.8 6.5 Max. 20 50 1.5 0.5 1580 1544 3 ----0.7 1.0 0.1 20 --6.2 7.0 Unit mA mA V mW/mA nm nm deg. deg. nsec mA A pF mW mm
Note : <1> [ ]applied to the lens cap type. Note : <2> Pf,Df are applied to the ball lens type. Note : <3> Df is a distance between reference plane of the base to the fiber.
MITSUBISHI ELECTRIC
May 2004
MITSUBISHI LASER DIODES
ML9xx45 SERIES
1550,1520nm InGaAsP FP LASER DIODES
OUTLINE DRAWINGS
Dimension : mm
ML920J45S ML925B45F
2-90
5.6 -0.03 4.25 (0.25)
(3)
+0
(3)
LD
Case
(1)
(2)
(1) (4)
(2)
PD
(4)
(0.25)
ML920J45S
10.1 0.25 0.03 3.550.1 (Glass) 1.5Min. 1.0Min. 1.27 0.03
Emitting Facet
(3)
LD
Case
2.10.15
(1)
(2)
PD
Reference
Plane
0.1
1.2
(4)
18 1
2.00.25 (P.C.D.) (1) (2)
4-0.450.05
ML925B45F Pin Connection ( Top view )
Dimension : mm
ML920K45S ML925C45F
5.6 -0.03 4.25 (0.25)
(3)
+0
(3)
LD
Case
(1)
(2)
(2)
PD
2-90
(1) (4)
(0.25)
(4)
10.1
ML920K45S
3.550.1 1.50.005
(3)
LD
Case
(5.8)
3.9 0.2
1.27 0.03
(3.05)
Emitting Reference
Facet Plane
(1)
(2)
PD
0.1
1.2
(4)
2.00.25 (P.C.D.) (1) (2)
4-0.450.05
ML925C45F Pin Connection ( Top view )
18 1
MITSUBISHI ELECTRIC
May 2004
MITSUBISHI LASER DIODES
ML9xx45 SERIES
1550,1520nm InGaAsP FP LASER DIODES
OUTLINE DRAWINGS
Dimension : mm
ML920Y45S
5.6 -0.03 4.25 (0.25)
(3)
+0
2-90
(1) (4)
(2)
(0.25)
(3)
LD
Case
10.1
(1)
(2)
PD
3.550.1 1.50.005 (6.5)
(4)
3.6 0.2
ML920Y45S
1.27 0.03 (3.0)
Emitting Reference Facet Plane
( Top view )
0.1
18 1
1.2
2.00.25 (P.C.D.) (1) (2)
4-0.450.05
MITSUBISHI ELECTRIC
May 2004

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